| PART |
Description |
Maker |
| BFP193W Q62702-F1577 |
NPN Silicon RF Transistor (For low noise/ high-gain amplifiers up to 2GHz For linear broadband amplifiers)
NPN Silicon RF Transistor (For low noise, high-gain amplifiers up to 2GHz For linear broadband amplifiers)
From old datasheet system
|
SIEMENS[Siemens Semiconductor Group]
|
| VC-3R0A50-1750 VC-3R0A50-0967A VC-3RA50-0967A VC-2 |
AMC JUMPER,1.32MM,100MM BLACK ASSP的移动电
BNC (M) TO UHF (F) ADAPTERS VCO, 1620 MHz - 1650 MHz
ASSP for Mobile Telephone VCO, 1632.5 MHz - 1672.5 MHz
ASSP for Mobile Telephone VCO, 1280 MHz - 1440 MHz
N (F) TO BNC (F) ADAPTER VCO, 1649.7 MHz - 1686.3 MHz
ASSP for Mobile Telephone VCO, 880 MHz - 915 MHz
N (F) TO BNC (M) ADAPTER
|
Fujitsu, Ltd.
Fujitsu Limited
Fujitsu Component Limited.
Fujitsu Component Limit...
|
| 2SC4043S 2SC3838 2SC3838K 2SC4083 2SC4726 2SC5662 |
High-Frequency Amplifier Transistor(11V 50mA 3.2GHz)
High-Frequency Amplifier Transistor(11V, 50mA, 3.2GHz)
High-Frequency Amplifier Transistor(11V/ 50mA/ 3.2GHz)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
|
ROHM[Rohm]
|
| MGFK35V2732 K352732 |
12.7-13.2GHz BAND 3W INTERNALLY MATCHED GaAs FET
12.7~13.2GHZ BAND 3W INTERNALLY MATCHED GAAS FET
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| HMC431LP4E HMC431LP408 |
MMIC VCO w/ BUFFER AMPLIFIER, 5.5 - 6.1 GHz
VCO, 5500 MHz - 6100 MHz
|
Hittite Microwave Corporation
Hittite Microwave Corporati...
|
| TPD03-0.5G02S |
0.5-2GHz 3-Way Power Divider
|
Transcom, Inc.
|
| TPD04-0.5G02S |
0.5-2GHz 4-Way Power Divider
|
Transcom, Inc.
|
| MGFC40V6472 |
6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET
6.4- 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET 6.4 - 7.2GHz频段10W的内部匹配砷化镓场效应管
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| BFR92W Q62702-F1488 |
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) NPN硅射频晶体管（对于宽带放大器高达2GHz和快速的非饱和由0.5毫安0毫安的集电极电流开关）
NPN Silicon RF Transistor (For broadband amplifiers up to 2GHz and fast non-saturated switches at collector currents from 0.5 mA to 20 mA) L BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| SPA-1526Z SPA-1526Z-EVB1 SPA-1526Z-EVB2 SPA-1526Z- |
0.7GHz to 2.2GHz 2W InGaP HBT AMPLIFIER
|
RF Micro Devices
http://
|
| VCO190-2250T VCO190-2250TY |
VCO, 2200 MHz - 2300 MHz
VCO Product Specification
|
SIRENZA MICRODEVICES INC
|
